IHP Standard Passives

IHP Passive Technology Features: Download Presentation

 

  • 248nm Deep UV Stepper Lithography
  • Substrate: 220nm SOI with 2000nm BOX
  • Two etch levels: 70nm and 220nm
  • Fixed dose for both WG and GRC
  • Rule WG: Min Mask-Line=180nm, Mask-Space=140nm
  • Rule GRC: Mask-Line=130nm, Mask-Space=130nm
  • Low loss waveguides ~Strip <3dB/cm, Ridge<1dB/cm
  • Grating Coupler ~ 4.5dB insertion loss @1550nm
Details about how to access IHP's silicon photonics technology are explained here. The first public run of this technology will be open for registration in September 2012. For queries contact: Lars Zimmerman,  This e-mail address is being protected from spambots. You need JavaScript enabled to view it

 

Last Updated (Wednesday, 27 November 2013 15:01)