ePIXfab

This is LETI's key process for standardized passive silicon photonic functions.

Key aspects

• 200mm silicon-on-insulator wafers, 220nm crystalline Si on 2um BOX
• 193nm deep UV lithography
• WG module: 220nm full etch for waveguides, photonic crystals,...
• FC module: 70nm  partial etch for grating couplers, splitters, ...
• NEW: Heater module: 600nm of top oxide with Ti/TiN heaters
• Minimum linewidth: 120nm
• Minimum pitch: 280nm
• Choice from fixed design sizes
• Delivery of at least 50 dies

Design size

There is a choice from 3 design sizes (see technology file below for further information)

• S1: 7mm x   3.6mm
• S2: 7mm x   7.6mm
• S3: 7mm x 11.0mm