In this run, in addition tot he silicon etching for passive photonic devices, LETI offers a set of new process modules:

• Si and Ge epitaxy in full film or in a cavity (local epi)
• P and N implant and anneal (B and P)
• Metal contact directly on silicon (large contacts)

As a first offering, the design rules for these new modules allow for some freedom in the parameter/design space. At the subscription deadline, the user should give us the preferred full technology description. LETI will then compile the final design rules, and organize sufficient cost sharing between the designs from different users. The design rules will be updated and the users can then prepare their mask design.

First wafers delivered, other in fabrication

LETI silicon photonics LETI_03

• 15 February 2009: subscription deadline
• 15 March 2009: mask deadline: submit for design rule check and design freeze
• End June 2009: processed

• See technology file for details
• Design size, custom or 6mmx6mm
• Full technology description
• Number of wafers and possible process variations between them
• Finishing and dicing options
• Administrative details

1. Discuss process options, process flow and other technical details with Jean-Marc Fedeli:
   • jean-marc.fedeli(at)cea.fr
   • tel +33-4-38786879
2. Subscribe through e-mail to Pieter Dumon.