This run is split in two paths: LETI4 Passive and LETI4 Flex.

LETI4 Passive offers a standardized 2 layer platform for passive devices, with strict design rules and strict timing. LETI4 Flex offers more advanced processes for active and other devices, in which the user has still a relatively large choice on the process flow and process parameters.

LETI4 Passive:

2 layer process in 220nm SOI:

• WG: full 220nm etch for strip waveguide and photonic crystal based devices
• FC: partial 70nm etch for grating couplers, rib waveguide devices. splitters and other shallow etched features.

LETI4 Flex:

• Choice of SOI layer thickness 50-400nm
• Si and Ge epitaxy in full film or in a (masked) cavity
• P and N implant (B,P) and anneal
• contacts and metalization 

Open for subscription

Choice of LETI silicon photonics LETI 4 FLEX and LETI STD

• 31 January 2010: subscription deadline
• 28 February 2010: mask deadline
• End April 2009: processed

• 31 January 2010: subscription deadline

1. Discuss process options, process flow and other technical details with Maryse Fournier and Jean-Marc Fedeli:  
   • maryse.fournier(at)cea.fr
   • jean-marc.fedeli(at)cea.fr
   • tel +33-4-38786879
2. For use of LETI4 Standard, please download and fill the registration form
3. Subscribe through e-mail: mpw-letiepixfabeu.