This is LETI's key process for silicon photonic functions with passive and active devices, Ge/Si epi, metallization and heater modules. It allows for flexibility for the user in process specification.

• 200mm silicon-on-insulator wafers
• 220nm Si on 2um BOX, 400nm Si on 1um BOX, or custom thickness 100-400nm.
• crystalline or low-loss amorphous (hydrogenated) silicon film
• 193nm and 248nm deep UV lithography
• Si and Ge epitaxy, in full film or in cavity
• Implant & anneal (Boron and Phosphorous)
• Metal contact (large contacts)
• Heater (new since mid 2010)
• Best effort

The LETI process has no standard die size, but a number of predefined masks for fiber coupling are available.

• One die can either be allocated by one user (dedicated cell), or shared by multiple users (shared cell) as explained in the shuttle run options file.
• During sign-in, ask either for a full cell or for part of it
• If you would require a custom die size, ask the coordinator