This is LETI's key process for standardized passive silicon photonic functions.

• 200mm silicon-on-insulator wafers
• 220nm Si on 2um BOX
• crystalline or low-loss amorphous (hydrogenated) silicon film
• 193nm and 248nm deep UV lithography
• 2 process layers: WG (220nm etch), FC (70nm etch)
• Several predefined masks for fiber coupling available.

The LETI process has no standard die size, but a number of predefined masks for fiber coupling are available.

• One die can either be allocated by one user (dedicated cell), or shared by multiple users (shared cell) as explained in the shuttle run options file.
• During sign-in, ask either for a full cell or for part of it
• If you would require a custom die size, ask the coordinator